AON6522 25v n-channel alphamos general description product summary v ds i d (at v gs =10v) 200a r ds(on) (at v gs =10v) < 0.95m w r ds(on) (at v gs = 4.5v) < 1.3m w application 100% uis tested 100% r g tested symbol v ds v gs v v 20 gate-source voltage drain-source voltage 25 ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al maximum parameter absolute maximum ratings t a =25c unless otherwise noted 25v units g ds top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc mj 100ns a i d 200 151 t c =25c t c =100c 57 junction and storage temperature range a continuous drain current g v t a =25c i dsm continuous drain current 36 avalanche energy l=0.1mh c 125 maximum junction-to-ambient a c/w r q ja 14 40 17 units v 20 gate-source voltage 450 a -55 to 150 c pulsed drain current c 71 parameter typ max 50 avalanche current c 7.3 33 thermal characteristics w t c =25c power dissipation b t a =70c t a =70c 83 4.7 t a =25c t c =100c p d w c/w c/w maximum junction-to-ambient a d 1 55 1.5 maximum junction-to-case power dissipation a p dsm rev 0: jan 2012 www.aosmd.com page 1 of 6
AON6522 symbol min typ max units bv dss 25 v v ds =25v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1 1.4 2 v 0.75 0.95 t j =125c 1.1 1.4 1 1.3 m w g fs 100 s v sd 0.7 1 v i s 100 a c iss 7036 pf c oss 2778 pf c rss 353 pf r g 0.5 1.1 1.7 w q g (10v) 107 145 nc q g (4.5v) 49.7 68 nc q gs 11.7 nc q gd 21.4 nc t d(on) 12.3 ns t r 12.8 ns t 68.5 ns r ds(on) static drain-source on-resistance gate resistance forward transconductance switching parameters turn-on delaytime v gs =0v, v ds =0v, f=1mhz total gate charge v ds =5v, i d =20a input capacitance output capacitance turn-off delaytime gate drain charge total gate charge v gs =10v, v ds =15v, r l =0.75 w , r =3 w gate source charge v gs =10v, v ds =15v, i d =20a turn-on rise time zero gate voltage drain current m w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 m a drain-source breakdown voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 m a, v gs =0v i dss diode forward voltage dynamic parameters v gs =4.5v, i d =20a v gs =10v, i d =20a gate-body leakage current v ds =0v, v gs = 20v i s =1a,v gs =0v maximum body-diode continuous current m a t d(off) 68.5 ns t f 28.8 ns t rr 31 ns q rr 106 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime i f =20a, di/dt=500a/ m s r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperat ure t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: jan 2012 www.aosmd.com page 2 of 6
AON6522 typical electrical and thermal characteristics 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 2.5v 4.5v 10v 3v 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.00e+02 0 0.2 0.4 0.6 0.8 1 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 0.5 1 1.5 2 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0: jan 2012 www.aosmd.com page 3 of 6
AON6522 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse safe operating area (note f) r q jc =1.5 c/w rev 0: jan 2012 www.aosmd.com page 4 of 6
AON6522 typical electrical and thermal characteristics 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 50 100 150 200 250 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to- ambient (note h) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ambient (note h) r q ja =55 c/w rev 0: jan 2012 www.aosmd.com page 5 of 6
AON6522 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0: jan 2012 www.aosmd.com page 6 of 6
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